D2022UK document number 3827 issue 2 semelab ltd. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab ltd reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use.semelab encourages customers to verify that datasheets are current before placing orders. p d power dissipation bv dss drain ? source breakdown voltage * bv gss gate ? source breakdown voltage * i d(sat) drain current * t stg storage temperature t j maximum operating junction temperature 125w 65v 20v 5a ?65 to 150c 200c mechanical data gold metallised multi-purpose silicon dmos rf fet 25w ? 28v ? 500mhz push?pull features ? simplified amplifier design ? suitable for broad band applications ? very low c rss ? simple bias circuits ? low noise ? high gain ? 13 db minimum absolute maximum ratings (t case = 25c unless otherwise stated) applica tions ? vhf/uhf communications from 50 mhz to 1 ghz metal gate rf silicon fet tetrafet dim mm tol. inches tol. a 16.38 0.26 0.645 0.010 b 1.52 0.13 0.060 0.005 c 45 5 45 5 d 6.35 0.13 0.250 0.005 e 3.30 0.13 0.130 0.005 f 14.22 0.13 0.560 0.005 g 1.27 x 45 0.13 0.05 x 45 0.005 h 1.52 0.13 0.060 0.005 i 6.35 0.13 0.250 0.005 j 0.13 0.02 0.005 0.001 k 2.16 0.13 0.085 0.005 m 1.52 0.13 0.060 0.005 n 5.08 max 0.200 max o 18.90 0.13 0.744 0.005 dq pin 1 source (common) pin 3 drain 2 pin 5 gate 1 pin 2 drain 1 pin 4 gate 2 * per side c a o n mk j i h g f e d b 1 54 3 2
D2022UK document number 3827 issue 2 semelab ltd. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab ltd reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use.semelab encourages customers to verify that datasheets are current before placing orders. parameter test conditions min. typ. max. unit 65 1 1 17 0.9 13 40 20:1 60 30 2.5 v gs = 0 i d = 10ma v ds = 28v v gs = 0 v gs = 20v v ds = 0 i d = 10ma v ds = v gs v ds = 10v i d = 1a p o = 25w v ds = 28v i dq = 0.5a f = 500mhz v ds = 28v v gs = ?5v f = 1mhz v ds = 28v v gs = 0 f = 1mhz v ds = 28v v gs = 0 f = 1mhz v ma ma vs db % ? pf pfpf electrical characteristics (t case = 25c unless otherwise stated) drain?source breakdown voltagezero gate voltage drain current gate leakage current gate threshold voltage* forward transconductance* common source power gain drain efficiencyload mismatch tolerance input capacitance output capacitancereverse transfer capacitance hazardous ma terial warning the ceramic portion of the device between leads and metal flange is beryllium oxide. beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. these devices must never be thrown away with general industrial or domestic waste. r thj?case thermal resistance junction ? case max. 1.4c / w thermal da ta * pulse test: pulse duration = 300 ms , duty cycle 2% total device per side per side bv dss i dss i gss v gs(th) g fs g ps h vswr c iss c oss c rss
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